The performance of the novel multi-channel GaN Schottky rectifier is impressive, boasting a power figure-of-merit that exceeds the unipolar SiC limit, and is among the highest in all high-voltage rectifiers.

Oct 3, 2022 · Chinese firm Lakesemi has developed a new generation SiC full bridge with rectifier module — LSCT30PV120B9G. This new 1200V module is said to have low on-resistance of 88mΩ …

"Our new secondary-side synchronous rectifier controller brings another dimension to the chargers and adapters applications with proprietary CCM SR turn-off control algorithm.

Infineon Technologies AG will acquire International Rectifier for around $3 billion ($40 per share in an all-cash transaction), the companies announced today. The combination promises to create a …

The addition of the trench greatly enhances the reverse blocking characteristics of the GaN Schottky rectifier by delivering a doubling of the breakdown voltage and a slashing of the leakage current at …

Oct 14, 2025 · For the AC/DC front-end, Renesas uses bi-directional GaN switches to simplify rectifier designs and increase power density. Renesas REXFET MOSFETs, drivers and controllers …

Sep 13, 2023 · For example, a three phase, 380V supply is changed into 540V DC (typically) using a Vienna rectifier. This DC is then chopped to provide the required frequencies to drive and control the …

To demonstrate the improved performance of these new eGaN FETs, two buck converters were built. The EPC9018 combines the 30V EPC2023 FET as the synchronous rectifier with the 40V EPC2015 …

The converters also feature an isolated half-bridge topology consisting of a GaN-based half-bridge, a fully isolated transformer, and an active rectifier unit for each phase.

Nov 3, 2022 · Designed for server, telecom rectifier, solar inverter, EV charger, gaming, PC and universal charging applications, aMOS5 offers the RDS (ON) granularity from 31mΩ to 1.6oΩ with …