IRF540N - N-channel MOSFETs | Infineon Technologies
IRF540N is a N-channel power MOSFETs with VDS max: 100 V, RDS (on) max: 44 mOhm, Package: TO-220, Technology: IR MOSFET™, ID max: 33 A
IRF540N Datasheet (PDF) - International Rectifier
Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRF540N Data Sheet January 2002 33A, 100V, 0.040 Ohm, N-Channel, Power MOSFET Packaging
100V N-Channel Power MOSFET DESCRIPTION The IRF540N uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications.
IRF540N Datasheet by onsemi - DigiKey
View IRF540N by onsemi datasheet for technical specifications, dimensions and more at DigiKey.
* This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please …
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
All About the IRF540N MOSFET: How It Works and Where to Use It
The IRF540N is a powerful and versatile N-channel MOSFET widely used in electronic circuits. It combines efficiency, fast switching speeds, and low resistance to provide reliable performance in …
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRF540NSTRLPBF Infineon Technologies | Mouser
Infineon IRF540N/Z Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.