EDN

RF power transistors are based on LDMOS

The MRFE6S9046N, MRF8S9100H/HS, and MRF8S18120H/HS high-performance RF power transistors, are based on laterally diffused metal oxide semiconductor (LDMOS) technology, and incorporate enhancements ...
Mena FN

Radio Frequency (RF) Microwave Power Transistor Market Study Outlining Growth Opportunities, Market Share

(MENAFN- EIN Presswire) EINPresswire/ -- The radio frequency (RF) microwave power transistor market is experiencing significant growth, driven by rising technological applications and expanding ...
EDN

STMicroelectronics expands family of RF LDMOS power transistors

STMicroelectronics has expanded its STPOWER family of RF LDMOS transistors, comprised of three different product series – the IDCH, IDDE, and IDEV – optimized for RF power amplifiers (PAs) in a ...
Electronic Design

Cool RF Transistors Pack A Mean Punch

Power-Amplifier (PA) and base-station manufacturers are faced with a series of similar problems. They both have a common interest in keeping base stations cool and minimizing cost. And they each have ...
Electronic Design

GaN Devices Raising the Output-Power Performance Bar

What are the different materials are used in creating GaN power transistors? The impact of heat on performance. A rundown of high-power RF GaN transistors currently on the market. Solid-state power ...
Microwaves & RF

High-Voltage Converters Bring the Power to Energy-Efficient Appliances

New Monolithic GaN converters from STMicroelectronics help boost energy savings in a wide range of applications.
Electronics Weekly

GaN RF input-matched transistor operates at 30-1,200MHz

Qorvo’s QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT, which operates from 30MHz to 1,200MHz. The integrated input matching network enables wideband gain and power performance ...