Business Wire

EPC Increases Benchmark Performance Versus Silicon MOSFETs with Latest 100 V eGaN ® FET Family

These new generation 100 V eGaN FETs are ideal for 48-V OUT synchronous rectification, class-D audio, infotainment, and lidar. EL SEGUNDO, Calif.--(BUSINESS WIRE)--EPC, the world’s leader in ...
Business Wire

Toshiba Launches Silicon Carbide MOSFET Module That Contributes to Higher Efficiency and Miniaturization of Industrial Equipment

TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “MG800FXF2YMS3,” a silicon carbide (SiC) MOSFET module integrating newly developed dual channel SiC ...
pv magazine International

New 650 V MOSFET for silicon carbide inverters

CREE has developed a new MOSFET that could be suitable for silicon-carbide-based string inverters above 10 kW in size. The U.S. manufacturer says switching losses are 20% lower with the new transistor ...
pv magazine International

Toshiba unveils silicon carbide MOSFET for PV inverters

Toshiba has developed a 2,200 V silicon carbide (SiC) MOSFET for inverters and energy storage systems, in order to help inverter manufacturers to reduce the size and weight of their products. Japanese ...
Design News

Silicon Carbide Power MOSFET

Cree Inc.'s commercial silicon carbide power MOSFET, the CMF20120D , provides blocking voltages up to 1200V with an on-state resistance (RDSon) of 80m at 25C. The RDSon remains below 100 m across its ...
Electronic Design

A New Generation of GaN Power ICs Mimic Silicon MOSFETs

Gallium nitride (GaN) is winning over the world of power electronics with its faster switching speeds and higher efficiency over that of silicon MOSFETs, which have dominated for decades. But nothing ...
Electronic Design

100-V Silicon MOSFETs Keep Pace with SiC and GaN Counterparts

Silicon MOSFETs are still viable and receiving ongoing process and R&D efforts. How and why the latest mid-voltage silicon MOSFET from Renesas proves it. The features of a development kit that eases ...
Morningstar

Wolfspeed Introduces Industry's First Commercially Available 10,000 V Silicon Carbide Power MOSFET

Revolutionary 10 kV SiC Technology Delivers Game-Changing Solution for Grid Modernization, Industrial Electrification and AI Data Center Infrastructure Wolfspeed, Inc., a global leader in silicon ...
EDN

Silicon is still viable in power, claims a new MOSFET architecture

While we’ve been hearing the drumbeat of “silicon is dead” in power semiconductors for nearly 10 years, according to Mark Granahan, CEO of iDEAL Semiconductor, it’s mainly the lack of innovation in ...
EDN

P-Channel Silicon MOSFET Power Switching

The RJE0609JPD is silicon P-channel MOSFET featuring a built-in over temperature shutdown circuit with high endurance capability against short circuit. It offers low on-resistance with a built-in ...