The P-channel power MOSFET of IXYS retail all features of the comparable N-channel power MOSFET such as very fast switching, voltage control, ease of paralleling and excellent temperature stability.
Devices Offer Industry-Low On-Resistance of 13.5 mΩ in 2 mm by 2 mm and 22 mΩ in 3 mm by 1.8 mm Footprint Areas at 4.5 V Vishay Intertechnology extended its TrenchFET® Gen III family of p-channel ...
The source voltage of a P-channel device is stationary when the device operates as an HS switch. Conversely, the source voltage of an N-channel device used as an HS switch varies between the low side ...
Vishay unveiled the first device built on its new p-channel TrenchFET(R) Gen III technology. The Si7137DP is a 20-V device said to have the lowest on-resistance ever achieved for a p-channel MOSFET ...
Rohm has co-packaged n and p-channel mosfets with ±40V or ±60V withstand voltages to provide overhead for driving motors at 24V. “In recent years, mosfets are increasingly required to ensure ...
Rohm is aiming at 24V high-side switching applications with a range of 40V and 60V p-channel singe and dual mosfets. “These products utilise Rohm’s 5th gen refined process to achieve a finer gate ...
MALVERN, Pa., Aug. 17, 2020 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced the first-ever -30 V p-channel power MOSFET to offer on-resistance of 1.7 mΩ at 10 V. With its ...
Littelfuse, Inc., an industrial technology manufacturing company empowering a sustainable, connected, and safer world, announced the release of IXTY2P50PA, the first automotive-grade PolarP ™ ...
Vishay Intertechnology has announced what it claims is the first p-channel power mosfet in the 'industry's smallest' 0.8 x 0.8mm chipscale package. According to Vishay, it features the first n- and ...
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