In a new Nature Communications study, researchers have developed an in-memory ferroelectric differentiator capable of performing calculations directly in the memory without requiring a separate ...

Scientists maximize the efficiency of hafnia-based ferroelectric memory devices. A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the ...

Researchers reduce the total thickness of capacitor stacks while maintaining strong polarization properties. (Nanowerk News) Modern electronic technology is rapidly advancing towards miniaturization, ...

A team at Monash University has recorded, for the first time, the atom-by-atom rearrangements that occur when data is written ...

In a specific crystal phase, hafnium oxide, or hafnia, exhibits ferroelectric properties that scientists have been trying to leverage for years. Theorists at the University of Rochester helped take an ...

Aluminum scandium nitride thin films could pave the way for the next generation of ferroelectric memory devices, according to a new study. Compared to existing ferroelectric materials, these films ...

Kai Ni was awarded a National Science Foundation CAREER Award to improve computing memory through the use of ferroelectric materials and capacity. The assistant professor of electrical and ...

Nanoscale ferroelectric tunnel junctions built on silicon show that shrinking device size dramatically boosts resistance contrast, offering a clear path to faster, denser non-volatile memory.

An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite being just 30 nm thick including top and bottom electrodes—making it ...