Micron Technology (NasdaqGS:MU) starts volume production of next generation HBM4 memory a quarter ahead of its prior timeline. The company reports that all of its 2026 HBM capacity is already sold out ...

Samsung ships HBM4 memory at 11.7Gbps speeds and claims an early industry lead ...

With doubled I/O interfaces and refined low voltage TSV design, HBM4 reshapes how memory stacks sustain throughput under data ...

AMD's next-generation 'Halo' APU seems likely to use bleeding-edge LPDDR6 memory for nearly double the bandwidth.

AI doesn't just need memory; it also needs massive storage capacity. Western Digital is a leader in developing advanced 3D ...

Samsung Electronics announced Thursday it had started mass production of next-generation memory chips to power artificial ...

Per-stack total memory bandwidth has increased by 2.7-times versus HBM3E, reaching up to 3.3 Tb/s. With 12-layer stacking, Samsung is offering HBM4 in capacities from 24 gigabytes (GB) to 36 GB, and ...

Designed to take on high-bandwidth memory in data centers, Z-Angle memory (ZAM) leverages diagonal interconnects for improved ...

Micron Technology (NasdaqGS:MU) has started building a US$24b advanced wafer fabrication plant in Singapore. The facility is ...

TL;DR: Samsung Electronics advances its next-gen HBM4E memory with 13Gbps per-pin speeds, delivering up to 3.25TB/sec bandwidth-over 2.5 times faster than HBM3E-and doubling power efficiency. Targeted ...

It could allow Sony’s next-generation console to better support more complex game worlds and higher-resolution textures.

The speed of data transfer between memory and the CPU. Memory bandwidth is a critical performance factor in every computing device because the primary CPU processing is reading instructions and data ...