The EPC2100 enhancement mode gallium nitride (eGaN) half-bridge transistor from Efficient Power Conversion (EPC) is the next step and the first of its kind power device for faster, more efficient ...
GaN Systems has developed two 650-V half-bridge evaluation cards (30 A and 60 A) to evaluate gallium nitride (GaN) drivers and GaN transistors in a variety of applications. The company claims these ...
Download this article in PDF format. Design engineers often turn to push-pull, half-bridge, and full-bridge power-converter designs for higher power output. These architectures show up from 200 W to ...
Researchers at the Fraunhofer IAF have integrated their monolithically integrated GaN power ICs using PCB embedding technology as a half bridge circuit, including gate and DC-link capacitors. By this ...
A question arose at Electronics Weekly after Rohm introduced an 8pad isolated for GaN transistors. In the BM6GD11BFJ-LB data sheet is a half-bridge application circuit (figure 28, right, slightly ...
GaN Systems announced a 100V High-Speed, Half-Bridge Evaluation Board in collaboration with ON Semiconductor, developed for existing and new PCB designs. The GS-EVB-HB-61008P-ON board allows power ...
Interest in ~30V half-bridge drivers is increasing here in wonderland, with the Nat Semi LM2725, LM2726 and LM2722 particularly attractive for their automatic dead-band adjustment, 4V minimum ...
Researchers at the Fraunhofer-Institute for Applied Solid State Physics IAF have integrated their monolithically integrated GaN power ICs using PCB embedding technology as a half bridge circuit, ...
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