Nanomechanical systems developed at TU Wien have now reached a level of precision and miniaturization that will allow them to ...
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Ultrathin ferroelectric capacitors for next-generation memory devices
An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite ...
TOKYO — Toshiba Corp. said it is leveraging its deep-trench-capacitor DRAM structure, which it has championed as a process driver since the 0.25-micron generation, to migrate its system-on-chip ...
But if you eliminate the capacitor, where is the charge that represents the data bit stored? That's the magic of SOI. The active circuit layer is isolated from the substrate, so there's a capacitive ...
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