EDN

Optimizing gate timing with external FET driver for high-input-voltage step-down converter

The gate timing of the top FET and bottom FET in a synchronous buck converter is critical. As shown in Figure 2 , the external driver LTC4440 introduces a propagation delay from the LTC3731’s top ...
EDN

Non-Classical CMOS: the “Ultimate” MOSFET Device

The key electronic component in the integrated circuit (IC) is the planar, bulk metal-oxide semiconductor field-effect transistor (MOSFET). A key driver for the IC industry has been Moore's Law, which ...
Electronic Design

Improved MOSFET Model Achieves Higher Accuracy

An improved SPICE model has been developed by Fairchild engineers for the simulation of trench power devices using the BSIM3 MOSFET model. The new model architecture seeks to eliminate shortcomings in ...
Semiconductor Engineering

Innovations in Device Design of The Gate-All-Around (GAA) Nanosheet FETs (IBM Research)

A technical paper titled “A Review of the Gate-All-Around Nanosheet FET Process Opportunities” was published by researchers at IBM Research Albany. “In this paper, the innovations in device design of ...
Electronic Design

MOSFET-Schottky Chip Permits Double-Sided Cooling

From Vishay Intertechnology comes a 30-V monolithic power MOSFET and Schottky diode in the PolarPAK package, which allows both top and bottom-side cooling in systems with forced air cooling. The ...